Radiation effects can induce severe and diverse soft errors in digital circuits and systems. A\nXilinx commercial 16 nm FinFET static random-access memory (SRAM)-based field-programmable\ngate array (FPGA) was selected to evaluate the radiation sensitivity and promote the space application\nof FinFET ultra large-scale integrated circuits (ULSI). Picosecond pulsed laser and high energy heavy\nions were employed for irradiation. Before the tests, SRAM-based configure RAMs (CRAMs) were\ninitialized and configured. The 100% embedded block RAMs (BRAMs) were utilized based on the\nVivado implementation of the compiled hardware description language. No hard error was observed\nin both the laser and heavy-ion test. The thresholds for laser-induced single event upset (SEU) were\napprox.3.5 nJ, and the SEU cross-sections were correlated positively to the laserâ??s energy. Multi-bit upsets\nwere measured in heavy-ion and high-energy laser irradiation. Moreover, latch-up and functional\ninterrupt phenomena were common, especially in the heavy-ion tests. The single event effect results\nfor the 16 nm FinFET process were significant, and some radiation tolerance strategies were required\nin a radiation environment.
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